Observation of Si 2p Core‐Level Shift in Si/High‐κ Dielectric Interfaces Containing a Negative Charge
Yasir Muhammad; Hedman Hannu-Pekka; Kokko Kalevi; Laukkanen Pekka; Rauha Ismo TS; Punkkinen Risto; Punkkinen Marko; Lehtiö Juha-Pekka; Granroth Sari; Rueff Jean-Pascal; Savin Hele; Rad Zahra Jahanshah
Observation of Si 2p Core‐Level Shift in Si/High‐κ Dielectric Interfaces Containing a Negative Charge
Yasir Muhammad
Hedman Hannu-Pekka
Kokko Kalevi
Laukkanen Pekka
Rauha Ismo TS
Punkkinen Risto
Punkkinen Marko
Lehtiö Juha-Pekka
Granroth Sari
Rueff Jean-Pascal
Savin Hele
Rad Zahra Jahanshah
WILEY
Julkaisun pysyvä osoite on:
https://urn.fi/URN:NBN:fi-fe2021042823700
https://urn.fi/URN:NBN:fi-fe2021042823700
Tiivistelmä
Negative static charge and induced internal electric field have often
been observed in the interfaces between silicon and high‐κ dielectrics,
for example Al2O3 and HfO2. The
electric field provides either beneficial (e.g., field‐effect
passivation) or harmful (e.g., voltage instability) effect depending on
the application. Different intrinsic and extrinsic defects in the
dielectric film and interface have been suggested to cause the static
charge but this issue is still unresolved. Here spectroscopic evidence
is presented for a structural change in the interfaces where static
charge is present. The observed correlation between the Si core‐level
shift and static negative charge reveals the role of Si bonding
environment modification in the SiO2 phase. The result is in
good agreement with recent theoretical models, which relate the static
charge formation to interfacial atomic transformations together with the
resulting acceptor doping of SiO2.
been observed in the interfaces between silicon and high‐κ dielectrics,
for example Al2O3 and HfO2. The
electric field provides either beneficial (e.g., field‐effect
passivation) or harmful (e.g., voltage instability) effect depending on
the application. Different intrinsic and extrinsic defects in the
dielectric film and interface have been suggested to cause the static
charge but this issue is still unresolved. Here spectroscopic evidence
is presented for a structural change in the interfaces where static
charge is present. The observed correlation between the Si core‐level
shift and static negative charge reveals the role of Si bonding
environment modification in the SiO2 phase. The result is in
good agreement with recent theoretical models, which relate the static
charge formation to interfacial atomic transformations together with the
resulting acceptor doping of SiO2.
Kokoelmat
- Rinnakkaistallenteet [19207]