Investigation of the effect of electric field on the growth of gallium oxide nanocrystals on gallium arsenide fabricated by hot water immersion.
Agaje, Miriam (2024-07-26)
Investigation of the effect of electric field on the growth of gallium oxide nanocrystals on gallium arsenide fabricated by hot water immersion.
(26.07.2024)
Julkaisu on tekijänoikeussäännösten alainen. Teosta voi lukea ja tulostaa henkilökohtaista käyttöä varten. Käyttö kaupallisiin tarkoituksiin on kielletty.
suljettu
Julkaisun pysyvä osoite on:
https://urn.fi/URN:NBN:fi-fe2024081464971
https://urn.fi/URN:NBN:fi-fe2024081464971
Tiivistelmä
Gallium oxide (Ga2O3) nanocrystals are ultrawide bandgap material that have gained popularity because of their promising capabilities for high-performance electronic and optoelectronic applications. Innovations in their synthesis processes, along with stronger support from industrial sectors and governmental bodies, have fuelled this development. This progress is placing Ga2O3 nanocrystals to be key components in future applications related to electronics, sensing, and environmental protection [40].
The purpose of this thesis was to investigate the effect of applied electric field (E-field) on the growth of gallium oxide nanocrystals on gallium arsenide surface that was treated by simple, cost-effective hot water immersion (HWI) method. The objective is to manage the growth of nanocrystals such that they are uniform and as small as possible. A comparison of the immersion method by using hot water and room temperature was done to establish the best growth method that fits the above objective which was found to be better achieved by Hot Water immersion.
The experiments focused on treating gallium arsenide semiconductor wafer by HWI to modify their properties, followed by applying an electric field during the growth process. The temperature during hot water immersion process and ultrasonic bath time were kept constant. While the sample orientation (vertical and horizontal), E-field magnitude and its direction relative to the sample surface are varied. Characterization of the Ga2O3 nanocrystals grown was performed with scanning electron microscopy and optical microscopy, while analysis of the scanning electron microscopy images was done with ImageJ and OriginPro.
The background study covers existing literature on Ga2O3 with focus on the commonly studied β-Ga2O3, its properties, nanocrystals fabrication / growth mechanisms, hot water immersion method and applications. Emphasis was on the different types of nanocrystals that were observed to have grown on the samples. Results of the nanocrystals growth / surface patterns are analyzed and discussion on these findings are further carried out at the end of this thesis.
I anticipate that the results and insights presented in this thesis will support the expanding knowledge on gallium oxide and inspire more research in this captivating and promising sector.
The purpose of this thesis was to investigate the effect of applied electric field (E-field) on the growth of gallium oxide nanocrystals on gallium arsenide surface that was treated by simple, cost-effective hot water immersion (HWI) method. The objective is to manage the growth of nanocrystals such that they are uniform and as small as possible. A comparison of the immersion method by using hot water and room temperature was done to establish the best growth method that fits the above objective which was found to be better achieved by Hot Water immersion.
The experiments focused on treating gallium arsenide semiconductor wafer by HWI to modify their properties, followed by applying an electric field during the growth process. The temperature during hot water immersion process and ultrasonic bath time were kept constant. While the sample orientation (vertical and horizontal), E-field magnitude and its direction relative to the sample surface are varied. Characterization of the Ga2O3 nanocrystals grown was performed with scanning electron microscopy and optical microscopy, while analysis of the scanning electron microscopy images was done with ImageJ and OriginPro.
The background study covers existing literature on Ga2O3 with focus on the commonly studied β-Ga2O3, its properties, nanocrystals fabrication / growth mechanisms, hot water immersion method and applications. Emphasis was on the different types of nanocrystals that were observed to have grown on the samples. Results of the nanocrystals growth / surface patterns are analyzed and discussion on these findings are further carried out at the end of this thesis.
I anticipate that the results and insights presented in this thesis will support the expanding knowledge on gallium oxide and inspire more research in this captivating and promising sector.